Understanding Diffusion, Activation, and Related Phenomena in SiGe Alloys: Models and Challenges

摘要

An effective diffusivity modeling approach is described that proposes scaling relations for point defect-mediated dopant diffusion to reflect how SiGe with a given Ge concentration differs from Si. Literature results from density functional theory calculations, statistical arguments, and kinetic lattice Monte Carlo simulations can be used to determine the expected scaling relations, which can be verified and adjusted later by comparisons to experimental data. Considerations for targeting of anneals for SiGe and Ge are given. Approaches to optimize annealing using millisecond anneals and nonequilibrium effects are discussed and expectations of behavior in SiGe are outlined. Additional uncertainties related to these SiGe-related behaviors in nanoscale materials are discussed.