Millimeter-Wave and Noise Properties of Si~Si_(1-x) Ge_x Heterojunction Double-Drift Region MITATT Devices at 94 GHz

摘要

The authors have made an attempt to study the millimeter-wave properties and noise performance of Si~S_(1-x)Ge_x anisotype heterojunction Double-Drift Region (DDR) Mixed Tunneling Avalanche Transit Time (MITATT) devices operating at 94 GHz. A computer simulation technique based on drift-diffusion model is used for the present study. Two different mole fractions, x = 0.1 and x = 0.3 of Ge and four types of device structure are considered for the simulation. The results show that the n-Si_(0.7)Ge_(0.3)~p-Si heterojunction DDR structure of MITATT device excels all other structures as regards DC to RF conversion efficiency (20.15%), CW power output (773.29 mW) and noise measure (33.09 dB).