Via-last/backside-via 3D integration using a visible-light laser debonding technique

机译：使用可见光激光剥离技术的通过最后/背面通过3D集成

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A visible-light laser debonding technique is introduced for via-last/backside-via 3D integration. Temporary bonding of 12-inch wafers with a temporary glue and the subsequent wafer thinning processes give small TTV within 1 µm by using an auto-TTV functions. Cu-TSV daisy chains with TSV diameters of 5 µm are formed in 50-µm-thick thinned Si wafers.

机译：通过最后/背面的3D集成引入了可见光激光剥离技术。通过使用自动TTV功能，具有临时胶水的12英寸晶片和随后的晶片变薄过程的临时粘合在1μm内给出小TTV。具有TSV直径为5μm的Cu-TSV雏菊链形成为50μm厚的稀薄Si晶片。

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《IEEE International Workshop on Low Temperature Bonding for 3D Integration》|2014年||共1页
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Fukushima T.; Mariappan M.; Bea J.-C.; Hashimoto H.; Sato Y.; Motoyoshi M.; Lee K.-W.; Koyanagi M.;
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Via-last/backside-via 3D integration using a visible-light laser debonding technique

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