Study of Electrostatics and Transport Properties of Multigate Graded Nanowire Channel MOSFETs

摘要

In this work, we have studied the electrostatics and ballistic transport characteristics of a multigate MOSFET structure with axially composition graded InGaAs channel. Wave-function penetration and other quantum mechanical effects were considered, along with the effects of strain on the graded heterojunction. Schroedinger and Poisson's equations were solved numerically using FEM method. Furthermore, we have studied effects of doping and depth variation of the graded layers on the threshold voltage and inversion gate capacitance of the device. The transport performance parameters extracted from the simulation revealed excellent on and off state transport performance of the graded device with an on-off current ratio of 10~7, Drain Induced Barrier Lowering of 43.79 mV/V, Subthreshold Swing of 61.37 mV/dec.