Growth Behavior of M-Plane ZnO Epilayer on (100) LiGaO_2 by Chemical Vapor Deposition

摘要

The growth behavior of ZnO epilayer on (100) LiGaO_2 (LGO) substrates by chemical vapor deposition was studied. At 650°C or above, (10 1 0)-oriented ZnO epilayers were obtained. The epitaxial deposition of ZnO is, however, in competition with the volatilization of Li from the substrate surface. A discrete layer composed of ZnGa_2O_4 spinel nanocrystals is formed on the substrate surface. The (1010)-oriented ZnO grains, which nucleate epitaxially on the LGO substrate, have thus to grow laterally over the spinel nanocrystals to form a continuous epilayer.