Growth behavior and microstructure of ZnO epilayer on γ-LiAIO_2(100) substrate by chemical vapor deposition

摘要

Low lattice-mismatched γ-LiAlO_2(100) substrates were employed to grow ZnO epitaxial films by chemical vapor deposition. The influence of growth temperature on growth behavior of ZnO was investigated. Results indicated that the low lattice-matched (1010) crystallites nucleate on substrate at all growth temperatures employed. However, a second type of crystallites having an (0001) orientation can also nucleate on substrate at low growth temperature of 575 ℃ and 640 ℃. The growth rate of the later crystallite is, however, higher than that of the (1010) one and finally results in a single crystalline ZnO film having an [0001] azimuthal orientation.