Micro Roughness Determination Of Periodic Microelectronics Structures Using Optical Far Field Measurements

摘要

The recent advance in lithography process leads to microelectronics compound size reduction. As a direct consequence, micro roughness should not be negligible compared to critical dimension. That is why a novel approach has been developed using an angle resolved scatterometer to quantify roughness value. In order to compare and validate results from scattering measurement, a multiscale analysis will be performed with AFM measurement. Based on theory and numerical models, validation of this technique is performed.