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Recent Advances In 2D-Band Structure Imaging By k-PEEM and Prospects For Technological Materials

机译:K-PEEM和技术材料前景的2D频段结构成像的最新进展

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The imaging of surfaces using the PhotoElectron Emission Microscopy (PEEM) technique has recently received considerable interest, mainly thanks to the use of high brilliance synchrotron radiation which facilitates the study of surface properties and chemical selectivity. By inserting a transfer lens in the optical column of a high transmission and full energy-filtering PEEM, it is possible to image the back focal plane, named k-PEEM imaging mode. Hence, the corresponding image shows the angular distribution of the emitted photoelectrons for a given kinetic energy. By varying the kinetic energy, the complete energy filtering provides full 2D cuts of the band structure in reciprocal space. In this paper, we present the principles and the capabilities of this new imaging mode, and compare it to the standard ARPES technique. Then, we present results obtained on a model sample: Ag(100), and on a technological sample, epitaxial graphene on SiC(0001), highlighting the potential of this new imaging mode for the spatially resolved characterization of the electronic structure of monocrystalline materials in devices.
机译:使用光电子发射显微镜(PEEM)技术的表面成像最近获得了相当大的兴趣,主要感兴趣的是使用高亮度同步辐射辐射,这促进了表面特性和化学选择性的研究。通过在高传输和完全能量滤波PEEM的光学塔中插入传输透镜,可以将后焦平面图像图像,命名为K-PEEM成像模式。因此,相应的图像示出了用于给定动能的发射光电子的角分布。通过改变动能,完整的能量过滤在往复空间中提供了带结构的完整2D切口。在本文中,我们介绍了这种新成像模式的原理和能力,并将其与标准ARPES技术进行比较。然后,我们存在在模型样本:Ag(100)中获得的结果,在SiC(0001)上的外延石墨烯上,突出显示该新成像模式的电位,用于单晶材料的电子结构的空间分辨表征在设备中。

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