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Densification Behavior and Microstructure Evolution of SiC_f/SiC Composites Incorporated with In Situ Grown SiC Nanowires

机译:用原位生长SiC纳米线掺入SiC_F / SiC复合材料的致密化行为和微观结构演化

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SiC nanowires could be grown homogeneously within SiC fiber preforms by controlling the concentration of a reactant gas. The morphology and the growth behavior of the SiC nanowires were largely dependent on the degree of the reactant supersaturation. The SiC nanowires incorporated in the fiber preform increased the surface area at which the matrix deposition could take place, enhancing an efficiency of the matrix infiltration and altering the remaining pore structure of the SiC_f/SiC composite.
机译:通过控制反应气体的浓度,可以在SiC纤维预制件内均匀地生长SiC纳米线。 SiC纳米线的形态和生长行为在很大程度上取决于反应物过饱和度的程度。掺入纤维预制件中的SiC纳米线增加了基质沉积可以发生的表面积,提高基质浸润的效率,并改变SiC_F / SiC复合材料的剩余孔结构。

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