Preparation and Characterization of High Mobility Nb-Doped SnO_2 Transparent Conducting Films

摘要

Metal organic chemical vapor deposition (MOCVD) was employed for the preparation of niobium (Nb)-doped SnO_2 films on SiO_2 glass substrates. The structure, optical and electrical properties of the Nb-doped SnO_2 films were systemically studied. The X-ray diffraction results indicated that the polycrystalline rutile SnO_2 films were obtained with a preferred SnO_2 [110] growth direction. Among which, the 5.4 at.% Nb-doped SnO_2 film showed the lowest resistivity of 1.0×10~(-3) Ω·cm and the highest Hall mobility of 74 cm~2·V~(-1)·s~(-1). The average visible light transmittance of the 5.4 at.% Nb-doped SnO_2 sample was more than 79%. The obtained Nb-doped SnO_2 films exhibited low resistivity, high Hall mobility and good transparency, which might have wide applications in electric and photoelectric devices.