Effect of Seed Layers Prepared by Vertical Deposition Method on the Growth and Properties of Oriented Polycrystalline α-HgI_2 Films

摘要

Polycrystalline α-HgI_2 films have been grown through combining vertical deposition method with hot wall vapor phase deposition (HWPVD) method. The influence of the α-HgI_2 seed layers on the structural and electrical properties of the polycrystalline α-HgI_2 films was investigated. It is found that the α-HgI_2 seed layers play an important role in reducing the grain sizes, increasing the density improving the crystallographic orientation and electrical properties of the polycrystalline α-HgI_2 films.