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Figure-of-merit for optimizing the current-efficiency of low-power RF circuits

机译:用于优化低功耗RF电路的电流效率的优点

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The widely used RF Figures-of-Merit such as transit frequency (ƒt) and maximum frequency of oscillation (ƒmax), are only partial measures of performance and not well adapted to ultra-low power RF design. These FoMs are narrowly defined to characterize the speed of operation but without any consideration about the power efficiency of the device. A new FoM comprising both, the current-efficiency and the ability of the device to show gain at RF has been defined. This FoM lends itself naturally for the optimization of the operating points of RF circuits. In this paper we derive analytical expressions for ID and Gm, continuous from weak inversion to strong inversion and including velocity saturation, to evaluate the FoM. We extract the value of a critical inversion coefficient Icrit as the theoretical edge between velocity saturation and non-velocity saturation regions and show that the FoM has a peak which lies in the moderate inversion region at equation.
机译:广泛使用的RF图 - 诸如过渡频率(ƒ t )和振荡的最大频率(ƒ max ),只能是性能的部分措施,并且不太好适用于超低功率RF设计。这些FOMS狭义地定义为表征操作速度但没有考虑到设备的功率效率。已经定义了一种新的FOM,包括设备在RF下显示增益的电流效率和能力。本FOM自然地为RF电路的操作点提供了自然。在本文中,我们为I D 和G M CRIT 作为速度饱和度和非速度饱和区域之间的理论边缘提取了临界反转系数I 的值,并表示FOM具有位于方程中的中等反转区域中的峰值。

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