首页> 外文期刊>電子情報通信学会技術研究報告. 画像工学. Image Engineering >Low-Power and High Speed Techniques Due to Optimization of Short-Circuit Currents for CMOS Digital Circuits
【24h】

Low-Power and High Speed Techniques Due to Optimization of Short-Circuit Currents for CMOS Digital Circuits

机译:通过优化CMOS数字电路的短路电流实现低功耗和高速技术

获取原文
获取原文并翻译 | 示例
       

摘要

A technique that can reduce active power dissipation (P{sub}t) and minimize delay-time (t{sub}(dt)) in CMOS logic circuits has been developed by examining a 0.18-μm CMOS digital circuit. This circuit consisited of a three-stage inverter circuit, that is, a single inverter pre-driver stage, m-parallel inverter driver stage and JV-parallel inverter load stage. By both a SPICE analysis and experimental results obtained by fabricated devices, it was found that both minimum P{sub}t and t{sub}(dt) were obtained by choosing m of N{sup}(1/2){ = (m×n){sup}(1/2) = n}.
机译:通过研究0.18μmCMOS数字电路,已经开发出一种可以减少CMOS逻辑电路中的有功功率耗散(P {sub} t)和最小化延迟时间(t {sub}(dt))的技术。该电路由三级逆变器电路组成,即单个逆变器预驱动器级,m并联逆变器驱动器级和JV并联逆变器负载级。通过SPICE分析和由制造装置获得的实验结果,发现最小P {sub} t和t{sub}(dt)都是通过选择m的N {sup}(1/2){= (m×n){sup}(1/2)= n}。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号