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Figure-of-merit for optimizing the current-efficiency of low-power RF circuits

机译:品质因数,用于优化低功率射频电路的电流效率

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The widely used RF Figures-of-Merit such as transit frequency (ƒt) and maximum frequency of oscillation (ƒmax), are only partial measures of performance and not well adapted to ultra-low power RF design. These FoMs are narrowly defined to characterize the speed of operation but without any consideration about the power efficiency of the device. A new FoM comprising both, the current-efficiency and the ability of the device to show gain at RF has been defined. This FoM lends itself naturally for the optimization of the operating points of RF circuits. In this paper we derive analytical expressions for ID and Gm, continuous from weak inversion to strong inversion and including velocity saturation, to evaluate the FoM. We extract the value of a critical inversion coefficient Icrit as the theoretical edge between velocity saturation and non-velocity saturation regions and show that the FoM has a peak which lies in the moderate inversion region at equation.
机译:广泛使用的RF品质因数,例如渡越频率(ƒ t )和最大振荡频率(ƒ max ),仅是部分性能指标,效果不佳适应超低功耗射频设计。这些FoM狭义地定义为表征操作速度,但不考虑设备的功率效率。已经定义了一种新的FoM,包括电流效率和器件显示RF增益的能力。这种FoM自然地有助于优化RF电路的工作点。在本文中,我们推导了I D 和G m 的解析表达式,从弱反演到强反演并包括速度饱和,以评估FoM。我们提取了临界反演系数I crit 的值作为速度饱和和非速度饱和区域之间的理论边,并显示了FoM的一个峰值位于等式的中等反演区域。

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