OPTICAL PROPERTIES OF Ga OXIDE NANOSTRUCTURES

摘要

Gallium oxide nanodots of diameter 300 to 220 nm have been grown bySiO_2 assisted thermal evaporation. The formed grayish white crust deposited on thecrucible walls was proved to be crystalline Ga_2O_3through X-ray diffraction andTEM electron diffraction. The morphology of the samples examined by SEM,confirmed the nanodot structure formation of average diameter 220 ± 30 nm andaverage density of 1.77x10~8cm~(-2).The absorption spectra of the Ga_2O_3 suspensionin DMF solution revealed two absorption peaks at 329.99nm (3.76 eV) and 338.60 nm(3.67 eV). Photoemission of blue light at room temperature was observed at 410.3 nmwith FWHM 56.7 nm under excitation by 330.00 nm. The growth mechanism of thenanodots is explained in terms of liquid-vapor-solid mechanism (LVS). Theremaining hard ingot was found to have 16.6 Vicker's hardness. The silicon glasshaving the value of Vicker's hardness 15 indicates that the ingot material is 10 %harder than that of glass.