Analysis of SI Substrate Damage Induced by Inductively Coupled Plasma Reactor with Various Superposed Bias Frequencies

摘要

The plasma-induced defect site in Si layer was studied by the optical and electrical methods for various bias-frequency configurations. The growth of surface and interfacial layers (corresponding to the thickness increase in Si recess) was assigned by both SE and C-V measurement. The carrier trap site was identified by PR and C-V measurement. The above mentioned plasma damage is found to strongly depend on the superposed bias-frequency configuration. The present results provide a key guideline for future plasma and device designs.