Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies

机译：通过现代CMOS技术的总电离剂量效果的电路级模拟辐射硬化设计

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Physical model of total ionizing dose (TID) effects previously developed and successfully verified by authors was embedded to BSIM3v3 model implemented using Verilog-A language. This tool is fully compatible with standard SPICE simulators and allows taking into account the electrical bias conditions for each transistor during irradiation.

机译：作者嵌入了先前开发和成功验证的全电离剂量（TID）效应的物理模型被嵌入到使用Verilog-A语言实现的BSIM3V3模型。该工具与标准Spice模拟器完全兼容，并允许考虑在照射期间每个晶体管的电偏置条件。

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《International Conference on Micro- and Nano-Electronics》|2010年||共8页
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M.S. Gorbunov; G.I. Zebrev; R.N. Osipenko;
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中图分类全集、选集;
关键词
TID; BSIM3v3; SPICE; Verilog-A; CMOS; modeling, simulation;

机译：tid;bsim3v3;spice;Verilog-a;cmos;建模;模拟;

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专利

1. Total-ionizing-dose effects on isolation oxides in modern CMOS technologies [J] . Hugh J. Barnaby, Michael Mclain, Ivan Sanchez Esqueda Nuclear Instruments & Methods in Physics Research . 2007,第1a2期

机译：现代CMOS技术中总电离剂量对隔离氧化物的影响
2. Total-Ionizing-Dose Effects in Modern CMOS Technologies [J] . Barnaby H. J. IEEE Transactions on Nuclear Science . 2006,第期

机译：现代CMOS技术中的总电离剂量效应
3. JICG CMOS transistors for reduction of total ionizing dose and single event effects in a 130 nm bulk SiGe BiCMOS technology [J] . R. Sorge, J. Schmidt, Ch. Wipf, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2021,第Jana21期

机译：JICG CMOS晶体管，用于在130nm散装SiGe Bicmos技术中减少总电离剂量和单一事件效果
4. Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies [C] . M.S. Gorbunov, G.I. Zebrev, R.N. Osipenko International Conference on Micro- and Nano-Electronics . 2010

机译：通过现代CMOS技术的总电离剂量效果的电路级模拟辐射硬化设计
5. Total ionizing dose effects in advanced CMOS technologies. [D] . Rezzak, Nadia. 2012

机译：先进CMOS技术中的总电离剂量效应。
6. Low-dose or low-dose-rate ionizing radiation–induced bioeffects in animal models [O] . Feng Ru Tang, Weng Keong Loke, Boo Cheong Khoo 2017

机译：低剂量或低剂量率电离辐射诱导的动物模型生物效应
7. Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad [O] . Mattiazzo, S, Bagatin, M., Bisello, D., 2017

机译：在高达1级的28 nm Hi-K金属栅CMOS技术上的总电离剂量效应

Radiation-Hardening-by-Design with Circuit-Level Modeling of Total Ionizing Dose Effects in Modern CMOS Technologies

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