The simulation of growth thermodynamics in the synthesis of GaN_(1-x)P_xalloys

摘要

In this paper, thermodynamics method was used to calculate the growth of GaN_(1-x)P_x ternary alloys on (0001) GaN/sapphire substrates and the solubility of phosphorus in GaN by using the Gibbs free energy theory was calculated. The calculated results show that great deviation from linearity between the input mole ratio R and the equilibrium partial pressures, and the content of P in GaN varies with the growth temperature and the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200K as the strain factor increases from 0 to 1, indicating that the strain in the GaN_(1-x)P_x layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growth temperature.