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Monolithic Integration of Optical Mode-Size Converter and Highspeed Electroabsorption Modulators using Laterally Undercut Waveguide

机译:光学模式转换器和高速电气吸收调制器的单片集成使用横向底切波导

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A new monolithic integration scheme of fabricating optical spot-size converter (SSC) is realized in this work. High-speed electroabsorption modulator (EAM) is used to integrate such SSC. By laterally tapering the active region of an optical waveguide through undercut active region, a vertically asymmetric waveguide coupler can be defined to form an SSC, where the top is a tapered active waveguide, and the bottom is a large core of passive waveguide mode-matched to single-mode fiber (SMF). Through the top tapered active waveguide, the effective index can be gradually varied in the propagation direction, momentarily matching the bottom low-index passive waveguide. It not only performs the resonant coupling in such asymmetric waveguide coupler, but also locks the transferred power by the tapered structure. InGaAsP/InP multiple quantum wells are used as active region of active waveguide. Based on the highly selective etching properties between InGaAsP and InP, the tapered active waveguide can be fabricated by a method, called selectively undercut-etching-active-region (UEAR), enabling the processing a narrow waveguide structure (up to submicron) by general wet etching from a large waveguide ridge. It also leads to good microwave performance of waveguide. By taking this advantage, a SSC-integrated EAM can perform high-speed electrical-to-optical (EO) response as well as low-insertion loss properties. A mode transfer efficiency of 70% is obtained in such SSC. By narrowing waveguide by UEAR, over 40 GHz of -3dB electrical-to-optical (EO) response is obtained from this device. The high efficient SSC integrated with high-speed EAM suggests that the UEAR technique can have potential for applications in high-speed optoelectronic fields.
机译:在这项工作中实现了一种制造光学点尺寸转换器(SSC)的新单片集成方案。高速电吸收调制器(EAM)用于整合这种SSC。通过底切有源区横向逐渐逐渐变细光波导的有源区,可以定义垂直不对称的波导耦合器以形成SSC,其中顶部是锥形有源波导,底部是无源波导模式匹配的大核心到单模光纤(SMF)。通过顶部锥形有源波导,有效指数可以在传播方向上逐渐变化,暂时匹配底部低焦磁波导。它不仅在这种不对称波导耦合器中执行谐振耦合,而且还通过锥形结构锁定转移的功率。 InGaASP / INP多量子阱用作有源波导的有源区。基于InGaAsP和InP之间的高度选择性蚀刻性能,可以通过一种可选择性底切蚀刻 - 有源区(UEAR)的方法制造锥形有源波导,使得通过一般来说,将窄波导结构(直到亚微米)处理从大型波导脊的湿法蚀刻。它还导致波导的微波性能。通过采取这一优势,SSC集成的EAM可以执行高速电 - 光学(EO)响应以及低插入损耗特性。在这种SSC中获得70%的模式转移效率。通过UEAR缩小波导,从该装置获得超过40GHz的-3dB电气到光学(EO)响应。与高速EAM集成的高效SSC表明,UEAR技术可以具有高速光电场中的应用。

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