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Monolithic Integration of Optical Mode-Size Converter and Highspeed Electroabsorption Modulators using Laterally Undercut Waveguide

机译:使用侧向底切波导的光模大小转换器和高速电吸收调制器的单片集成

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A new monolithic integration scheme of fabricating optical spot-size converter (SSC) is realized in this work. High-speed electroabsorption modulator (EAM) is used to integrate such SSC. By laterally tapering the active region of an optical waveguide through undercut active region, a vertically asymmetric waveguide coupler can be defined to form an SSC, where the top is a tapered active waveguide, and the bottom is a large core of passive waveguide mode-matched to single-mode fiber (SMF). Through the top tapered active waveguide, the effective index can be gradually varied in the propagation direction, momentarily matching the bottom low-index passive waveguide. It not only performs the resonant coupling in such asymmetric waveguide coupler, but also locks the transferred power by the tapered structure.rnInGaAsP/InP multiple quantum wells are used as active region of active waveguide. Based on the highly selective etching properties between InGaAsP and InP, the tapered active waveguide can be fabricated by a method, called selectively undercut-etching-active-region (UEAR), enabling the processing a narrow waveguide structure (up to submicron) by general wet etching from a large waveguide ridge. It also leads to good microwave performance of waveguide. By taking this advantage, a SSC-integrated EAM can perform high-speed electrical-to-optical (EO) response as well as low-insertion loss properties. A mode transfer efficiency of 70% is obtained in such SSC. By narrowing waveguide by UEAR, over 40 GHz of -3dB electrical-to-optical (EO) response is obtained from this device. The high efficient SSC integrated with high-speed EAM suggests that the UEAR technique can have potential for applications in high-speed optoelectronic fields.
机译:在这项工作中实现了一种新的制造光斑大小转换器(SSC)的单片集成方案。高速电吸收调制器(EAM)用于集成此类SSC。通过将光波导的有源区域横向削尖,使其穿过底切有源区域,可以定义垂直不对称的波导耦合器以形成SSC,其中顶部是锥形有源波导,底部是无源波导模式匹配的大芯到单模光纤(SMF)。通过顶部锥形有源波导,有效折射率可以在传播方向上逐渐变化,瞬间匹配底部低折射率无源波导。它不仅在这种非对称波导耦合器中进行谐振耦合,而且通过锥形结构锁定了传输的功率。InGaAsP / InP多量子阱被用作有源波导的有源区。基于InGaAsP和InP之间的高度选择性刻蚀特性,可以通过一种称为选择性底切刻蚀有源区(UEAR)的方法来制造锥形有源波导,从而通常可以加工较窄的波导结构(至亚微米)。从大波导脊进行湿法蚀刻。这也导致波导具有良好的微波性能。利用这一优势,集成了SSC的EAM可以执行高速电光(EO)响应以及低插入损耗特性。在这种SSC中,可获得70%的模式转换效率。通过UEAR使波导变窄,可从该设备获得超过40 GHz的-3dB电光(EO)响应。集成了高速EAM的高效SSC表明,UEAR技术可以在高速光电领域中应用。

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