p-Type Doping of Small-Molecule Organic Semiconductors using Organic Vapor Phase Deposition (OVPD)

摘要

In the past few years, organic vapor phase deposition (OVPD) has been demonstrated to be an effective deposition method for high-performance monochrome and white organic light emitting diodes (OLEDs) [1-4]. OVPD provides good material utilization efficiency and large achievable deposition rates. An application of p-type doping is the improvement of hole injection either from the anode contact or from a charge generation layer in stacked OLEDs [5]. Nevertheless, no reports on p-type doping using OVPD can be found in literature, in part due to the thermal instability and high chemical sensitivity of organic dopants. In this work, p-type doping using an AIXTRON Gen-1 OVPD tool with two different show-erhead designs is examined. NDP-2 (NOVALED) and N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB) were used as p-type dopant (guest) and hole-conducting host, respectively. p-Type doped hole-only devices were fabricated and compared with undoped ones. Two different showerhead designs (made either of aluminum or stainless steel) were investigated with respect to OLED performance to determine possible side reactions. Highly efficient monochrome red OLEDs including a p-type doped hole transport layer were demonstrated exhibiting a current efficiency of 31 cd/A, a power efficiency of 26 lm/W and a driving voltage of 3.7 V without improved light outcoupling (all values at 1000 cd/m~2).