EUV resist performance on 22nm CH and on 22nm L/S - (PPT)

摘要

Based on our 2012 BMET resist evaluation results so far, two conclusions can be drawn: Clearly there are improvements on resist developments. Multiple resists are able to print 22nm L/S and 22nm CH However resist performance improvement does not seem to be big enough; Trade off of large LWR on US and large LCDU on CH is clearly seen with low dose to size resist samples. Process optimization (for instance FIRM rinse or resist Film Thickness optimization) may help in some degree on LWR / LCDU reduction. A major improvement in resist chemistry is needed to support the critical LCDU requirements for the sub 20nm EUV nodes.