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Static test evaluation of EUV1 full-field exposure tools - (PPT)

机译:EUV1全场曝光工具的静态试验评估 - (PPT)

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We present first results from Nikon's new low aberration, low flare optic installed at the Kumagaya (Japan) full-field EUV1 tool. A unique feature of this full-field tool is variable illumination coherence. Two illumination conditions are studied (σ= 0.5 and 0.8). This tool uses a Xe-based DPP source from Xtreme Technologies. The source power at IF is 3.3W Out-of-band radiation is well below 5% at the wafer planev The projection optic has an average WFE of 0.4nm rms (min 0.3 to max 0.5 nm rms) and center-field flare is calculated to be 7.3% [to be published in 2009]. Measured flare closely compares with calculated flare. At the center of the slit, measured flare ranges from 7.5% to 8.5%. A full through-slit flare map is presented. Tool TFD in static mode is approximately 100nm. Both sigma of 0.5 and 0.8 bright-field line (BF) patterning is shown with ultimate resolution of 26nm half-pitch. CDU, LWR, cross-slit H/V bias, DoF, EL%, MEEF, pitch-coherence, measured coma and astigmatism are evaluated for BF patterns for both sigma conditions and equivalent data for DF trenches for sigma of 0.5 only. Additionally, the imaging performance of 2D line and trench patterns is explored. During the evaluation a deliberate source cathode change was performed and we report the impact on patterning performance.
机译:我们首先提出尼康新的低差距,低闪光光学器件,安装在Kumagaya(日本)全场EUV1工具。此全场工具的独特功能是可变的照明相干性。研究了两个照明条件(σ= 0.5和0.8)。此工具使用来自Xtreme Technologies的基于XE的DPP源。如果晶片平面图在晶片平面下源于3.3W的源功率,则投影光学器件的平均WFE为0.4nm的平均WFE(最小0.3至最大0.5nm rms),并且计算中心场闪光7.3%[将于2009年发布]。测量的耀斑与计算的耀斑相比密切相关。在狭缝的中心,测量的耀斑从7.5%到8.5%。提供了一个完整的穿越闪光图。静态模式下的刀具TFD大约为100nm。均为0.5和0.8亮场(BF)图案的Sigma均具有最终分辨率为26nm半间距。 CDU,LWR,交叉狭缝H / V偏置,DOF,EL%,MEEF,俯仰相干性,测量的昏迷和散光,用于SIGMA条件的BF模式和仅为SIGMA的DF沟槽的等效数据。另外,探讨了2D线和沟槽图案的成像性能。在评估期间,进行了故意的源阴极改变,我们报告了对图案化性能的影响。

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