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EUVL Image Placement Error Analysis with a Rotatable Reticle - TIS and Overlay Results - (PPT)

机译:EUVL图像放置误差分析与可旋转掩模版 - TIS和覆盖结果 - (PPT)

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In EUV lithography, non-telecentric illumination on the mask side causes extra overlay errors from any deviation of mask surface non-flatness. Distinguishing the overlay errors caused by mask non-flatness from others is the first step in efficiently mitigating them. The unique mask, which contains 468 transmission imaging sensor (TIS) marks, can be used to measure focus and X and Y offsets with the ADT. The mask can be loaded in all 4 different orientations on the ASML alpha demo tool (ADT). All mask registration errors, overlay errors from lens distortion, and mask/chuck non-flatness were investigated with this special mask.
机译:在EUV光刻中,掩模侧的非远心照明导致掩模表面非平坦度的任何偏差导致额外的覆盖误差。区分由来自其他人的掩模非平坦度引起的覆盖误差是有效缓解它们的第一步。包含468个传输成像传感器(TIS)标记的独特掩模可用于测量ADT的焦点和X和Y偏移。可以在ASML Alpha Demo工具(ADT)上的所有4个不同方向上加载掩模。所有屏蔽登记错误,覆盖镜头失真的误差,并使用该特殊面具调查屏蔽/夹头非平整度。

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