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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Impact of registration error of reticle on total overlay error budget
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Impact of registration error of reticle on total overlay error budget

机译:光罩对准误差对总叠加误差预算的影响

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As the overlay specification decreases drastically, it is necessary to consider how the total overlay is influenced by each contributing factor. In particular, it is expected that the contribution on overlay error budget can be quantitatively analyzed in terms of the correlation among registration errors of the reticle. The reticle contribution of about 25% is assessed by the breakdown of the sources of overlay metrology uncertainty through the double exposure technique (DET) process. A positive correlation of around 0.7 mitigates the reticle contribution by 180%, compared to the uncorrelated case. In both DET and double patterning technique (DPT) processes, it is needed to positively correlate the registration errors among many reticles in order to decrease the reticle contribution. To maintain the gain of 180% due to positive correlation, the correlation coefficient requisite has to be increased it is difficult to achieve highly positive correlation among more than three reticles. From an integration point of view, three reticles used in DET and DPT generate three combinations of reticle sets. When the positive correlation between two reticle sets is determined to be 0.78, the other reticle set will statistically have a smaller correlation coefficient, 0.61 < 0.78. With an overlay specification of 12% of design rule and a reticle contribution of 25%, the specification for registration error was expected to be 7.7 nm (4 X) at the 45 nm node and 5.5 nm (4 X) at the 3 2 nm node in the uncorrelated case between two reticles. The positive correlation of around 0.7-0.78 helps to reduce the reticle specification by around 200% even in the DPT process. (c) 2006 American Vacuum Society.
机译:随着覆盖层规格的急剧下降,有必要考虑每个影响因素如何影响总覆盖层。特别地,期望可以根据掩模版的配准误差之间的相关性来定量地分析对覆盖误差预算的贡献。通过二次曝光技术(DET)对覆盖量测不确定度来源进行细分,可以评估约25%的掩模版。与不相关的情况相比,约0.7的正相关将标线的贡献减少了180%。在DET和双重图案化技术(DPT)过程中,都需要使许多掩模版之间的配准误差正相关,以减少掩模版的贡献。为了由于正相关而保持180%的增益,必须增加相关系数的要求,以使三个以上的标线之间难以实现高度正相关。从集成的角度来看,DET和DPT中使用的三个标线生成了标线集的三种组合。当确定两个标线集之间的正相关为0.78时,另一个标线集将在统计上具有较小的相关系数,即0.61 <0.78。在设计规则的12%覆盖规格和25%的标线片覆盖率的情况下,配准误差的规格在45 nm节点处为7.7 nm(4 X),在3 2 nm处为5.5 nm(4 X)。两个分划板之间不相关的情况下的节点。即使在DPT工艺中,约0.7-0.78的正相关也有助于将标线片规格降低约200%。 (c)2006年美国真空学会。

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