A study on the gate voltage dependence of the activation energy in Meyer-Neldel rule for charge mobility in pentacene OTFTs

摘要

A temperature analysis of the OTFT having pentacene as channel semiconductor and PMMA as gate dielectric has been performed. The experimental results have been studied by extracting the field-effect mobility of the TFTs and relating it to the sample's temperature. We have found the mobility to follow the Meyer-Neldel rule. This behavior can be considered imputable to the channel carrier hopping. The gate voltage effect on the thermal activation energy for the mobility and the asymptotic parameter has been also taken into account.