Study of Raman Spectrum of Fe Doped CeO_2 Thin Films Grown by Pulsed Laser Deposition

摘要

Ce_(1-x)Fe_xO_2 (x=0, 0.01, 0.03 and 0.05) thin films were grown by pulsed laser deposition technique on Si and LaAlO_3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F_(2g) mode at ～466 cm~(-1) and defect peak at 489 cm~(-1) for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.