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Resistivity of Mn_(1-xFe_xSi Single Crystals: Evidence for Quantum Critical Behavior

机译:MN_的电阻率(1-XFE_XSI单晶:量子临界行为的证据

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Resistivity measurements have been made on Mn_(1-x)Fe_xSi single crystals between 2 and 300 K for x = 0, 0.05, 0.08, 0.12 and 0.15. Fe doping is found to depress the magnetic ordering temperature from 30 K for x = 0 to below 2 K for x = 0.15. Although Fe doping results in a large increase of the low-temperature residual resistivity, the temperature dependence of the resistivity above the magnetic transition remains practically unaffected by increasing Fe content. An analysis of the temperature derivative of the resistivity provides strong evidence for the existence of a non-Fermi-liquid ground state near x = 0.15 and thus for a quantum critical point tuned by Fe content.
机译:在Mn_(1-x)Fe_XSI单晶中已经进行电阻率测量,X = 0,0.05,0.08,0.12和0.15之间的2和300k。发现Fe掺杂将磁性有序温度从30 k压下x = 0k的x = 0.15。虽然Fe掺杂导致低温残余电阻率的大幅增加,但电阻率高于磁性转变的温度依赖性通过增加Fe含量实际上不受影响。对电阻率的温度衍生物的分析提供了有关在X = 0.15附近的非FERMI-液体接地状态的有力证据,从而用于由Fe含量调整的量子临界点。

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