We demonstrate that ferroelectric memory is very eligible to become a non-volatile cache solution, in particular, in a multimedia storage system such as solid-state disk. It could provide benefits both of performance and of reliability. In performance, a FRAM cache allows us to rid overhead of power-off recovery. Random WRITE performance has been improved by 250%. In assertion of endurance, we investigate acceleration factors to evaluate cycle-to-failure of the ferroelectric memory both in device-level and in capacitor-level. What has been found is that ferroelectric memory cells have 6.0×10~(14) of the cycle-to-failure at the operational condition of 85 °C and 2.0V. This cycle-to-failure is well above lifetime READ/WRITE cycles of 9.5×10~(13) in such system. From 2-dimensional stress simulation, it has also been concluded that the number of dummy cells plays a critical role in qualifying the high temperature life tests.
展开▼
