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First-principles study of tuning the band gap with Cr doped BN sheets

机译:用CR掺杂BN板调整带隙的第一原理研究

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It is all known that the BN sheet is a nonmagnetic wide-band-gap semiconductor. Using Density Function Theory (DFT), the lattice parameters of Cr doped BN sheets were optimized, which were still kept on 2D planar geometry, and the band gap was studied. The simulation results show that the band gap is very easy to be tuned by Cr doped BN sheet, which is more stable structure. So Cr doped BN sheet is a promising material in modulating the band gap and through tuning the band gap it can be a highly efficient photocatalytic material et al. Because Cr is poisonous and harmful substance, it does harm to people's health and environmental pollution, particularly, heavy metal contamination in soil. So Cr doped BN sheet is a promising material in modulating the band gap, through tuning the band gap it can be a highly efficient photocatalytic material and benefit humanity and protect the environment et al.
机译:众所周知,BN片材是非磁性宽带间隙半导体。利用密度函数理论(DFT),优化了CR掺杂BN片材的晶格参数,仍然保持在2D平面几何形状,并研究了带隙。仿真结果表明,CR掺杂BN片材很容易调谐带隙,结构更稳定。因此,CR掺杂BN片材是调制带隙的有希望的材料,并通过调节带隙,它可以是高效的光催化材料等。因为Cr是有毒和有害的物质,所以它会对人们的健康和环境污染造成伤害,特别是土壤中的重金属污染。因此,CR掺杂BN片材在调节带隙时的有希望的材料,通过调节带隙,它可以是高效的光催化材料并使人类受益和保护环境等。

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