Design of Double Delta-Doped Al_(0.22)Ga_(0.78)As/In_(0.22)Ga_(0.78)As Pseudomorphic HEMTs

摘要

In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.