Electronic Structure Analysis of Silicon Nanowires for High Conductivity in n- and p-channel Nanowire-FET

摘要

To investigate properties of SiNW-FETs, we have studied the band structures of SiNWs aligned to [100] direction with different diameters. Band structures of SiNWs have been derived by first principle calculation. In SiNWs aligned to [100] direction, effective masses of electron are much smaller than those of hole, while numbers of subbands (quantum channels) near the conduction and valance band edge don't have large difference. Those two factors determine the performance for a transistor. Also, inter-band scattering event is more frequent when intervals of subbands are narrower. Then, a trade-off model of the number of quantum channels has been proposed for an optimum diameter extraction.