Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs

摘要

Polycrystalline silicon thin-film transistors present high performance, but the interface between different grains in the channel makes the electrical characteristics complicated. First of all, we applied the typical density of states (DOS) to insure the validity of the simulation. In order to obviously reveal the effect of the non-uniform distribution of the grains in the channel, we choose exaggerated DOS. Here we studied the the fluctuations of the electrical characteristics, including output current, transfer characteristic, and threshold voltage. Finally, we find the fluctuations of experimental conditions are acceptable.