Investigation of InGaP/InGaAs pseudomorphic triple doped-channel field-effect transistors

摘要

The comparison of DC performance on InGaP/InGaAs pseudomorphic field-effect transistors with triple doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.