Generic DG MOSFET Analytic Model with Vertical Electric Field Induced Mobility Degradation Effects

摘要

A generic DG MOSFET analytic model with vertical electric field induced mobility degradation effects is proposed and verified in this paper. It is shown that the proposed model is valid for different operation modes including symmetric DG (sDG), asymmetric DG (aDG) and independent DG (iDG). Extensive two-dimensional (2-D) device simulation is performed to verify the proposed model.