A Numerical Model for Solving Two Dimensional Poisson-Schrodinger Equation in Depletion All Around Operation of the SOI Four Gate Transistor

机译：SOI四门晶体管围绕运行耗尽二维泊松 - Schrodinger方程的数值模型

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A numerical model is developed for solving two dimensional Poisson-Schrodinger equation in depletion-all-around (DAA) operation of n-channel four gate transistor (G~4FET) by finite element method using COMSOL with MATLAB. The results from this model can be used to calculate ballistic drain current by mode-space approach. Potential distribution, conduction band profile, eigen energy profile and wave function distribution are observed.

机译：通过使用MATLAB的有限元方法，开发了一种用于解决N沟道四栅极晶体管（G〜4FET）的耗尽全面（DAA）操作中的二维泊松 - Schrodinger方程的数值模型。该模型的结果可用于通过模式空间方法计算弹性漏极电流。观察到电位分布，传导轴突，尖端能量分布和波函数分布。

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《IEEE International Conference of Electron Devices and Solid-State Circuits》|2009年||共4页
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作者
Shafat Jahangir; Q. D. M. Khosru;
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原文格式 PDF
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中图分类 TN4-53;
关键词
Four gate transistor (G~4FET); Depletion all around operation (DAA); Two dimensional Poisson-Schrodinger solver; Finite element method;

机译：四个栅极晶体管（G〜4FET）;耗尽围绕操作（DAA）;二维泊松 - Schrodinger求解器;有限元方法;

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A Numerical Model for Solving Two Dimensional Poisson-Schrodinger Equation in Depletion All Around Operation of the SOI Four Gate Transistor

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