Synthesis and characterization of β-Ga2O3/diamond-Iike carbon core-shell heterostructure nanowires

摘要

One-dimensional (ID) nano-scale semiconducting materials such as tubes, wires, rods, belts, based on bottom up paradigm have been extensively studied during the last decade for their remarkable optical and electronic properties due to confined geometry and scalability. Among various semiconducting material nanowires, monoclinic gallium oxide nanowire is recognized as a promising material in optoelectronic and magnetic devices due to its wide band gap (Eg= 4.9 eV) and intrinsic conduction electron spins. β-Ga2O3 nanowires have been synthesized through many methods such as thermal evaporation, arc discharge, laser ablation, carbothermal reduction, microwave plasma chemical vapor deposition. However, there is an ongoing effort to make a novel synthetic strategy with the aim to realize building-up nano-scale devices. For application of various optoelectronic devices such as transparent conducting oxide, gas sensing, spin tunneling junctions, suitable fabrication based on β-Ga2O3 nanowires might be required to overcome chemical and mechanical instabilities due to high surface to volume ratio.