Substrate mediated graphane-like nanostructures in hydrogen treated graphene on Ir(111)

摘要

Graphene has potential to become the ultimate material for future electronic devices'. However, graphene lacks a band gap around the Fermi level, which limits its application for circuit fabrication. At present, confinement induced by hydrogen barriers appears to be a promising way to Control the extent of graphene conductivity, raising a possibility for large-scale electronic circuits production by H adsorption, on a predefined adsorption pattern.