A 12-Channel Parallel 40Gb/s 0.35#956;m SiGe BiCMOS Laser Diode Driver

机译：一个12通道并联40GB / S0.35μmSiGeBICMOS激光二极管驱动器

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This paper presents a 12-channel parallel 40 Gb/s laser diode driver (LDD) realized in 0.35 mum SiGe BiCMOS technology. The single channel works at bite rate of 3.318 Gb/s. A "cross couple" capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20 mA modulation current and 2-5 mA bias current.

机译：本文介绍了在0.35毫米SiGe Bicmos技术中实现的12通道并联40 GB / S激光二极管驱动器（LDD）。单通道以3.318 Gb / s的速率为单位。 “交叉耦合”电容取消技术用于增加带宽。为避免相邻通道带来的基板耦合噪声，使用用于并联放大器的隔离方法。测量结果显示LDD可以提供5-20 mA调制电流和2-5 mA偏置电流。

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《Symposium on Photonics and Optoelectronics》|2009年||共4页
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中图分类 TN-53;
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BiCMOS integrated circuits; Ge-Si alloys; modulation; semiconductor lasers; 12-channel parallel; BiCMOS laser diode driver; SiGe; adjacent channel; bit rate 40 Gbit/s; current 5 mA to 20 mA; isolation method; modulation current; parallel amplifier; size 0.35 mum;

机译：BICMOS集成电路;GE-SI合金;调制;半导体激光;12通道并联;BICMOS激光二极管驱动器;SIGE;相邻通道;比特率40 Gbit / s;速率40 gbit / s;马;隔离方法;调制电流;平行放大器;尺寸0.35妈妈;

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1. Notice of Violation of IEEE Publication PrinciplesA 3.3 V 12.5 Gb/s 0.2 $mu$ m SiGe BiCMOS Laser Diode Driver Using Bias Current Modulation Cancellation [J] . Maxim A. IEEE Journal of Solid-State Circuits . 2007,第10期

机译：违反IEEE发布原则的通知使用偏置电流调制消除的3.3 V 12.5 Gb / s 0.2μmSiGe BiCMOS激光二极管驱动器
2. 2.5 Gbit/s/channel laser driver design for four-channel parallel optic transceiver using SiGe BiCMOS technology [J] . Young Gon Kim, Bien E., Chang J.J., Electronics Letters . 2003,第5期

机译：采用SiGe BiCMOS技术的四通道并行光收发器的2.5 Gbit / s /通道激光驱动器设计
3. Laser Diode Current Driver With (1-t/T)^{-1} Time Dependence in 0.35- mutext{m} BiCMOS Technology for Quantum Random Number Generators [J] . Nikša Tadić, Bernhard Goll, Horst Zimmermann Circuits and Systems II: Express Briefs, IEEE Transactions on . 2017,第5期

机译：具有时间依赖性的（1-t / T）^ {-1}的激光二极管电流驱动器，用于量子随机数发生器的0.35- mutext {m} BiCMOS技术
4. A 12-Channel Parallel 40Gb/s 0.35#956;m SiGe BiCMOS Laser Diode Driver [C] . Symposium on Photonics and Optoelectronics . 2009

机译：一个12通道并联40GB / S0.35μmSiGeBICMOS激光二极管驱动器
5. SiGe BiCMOS Integrated Circuits for Optical Communication Transmitters =SiGe BiCMOS integrierte Schaltkreise für optische Kommunikationssender [D] . Vieira Rito, Pedro Filipe. 2019

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6. A Preliminary In Vitro Study on the Efficacy of High-Power Photodynamic Therapy (HLLT): Comparison between Pulsed Diode Lasers and Superpulsed Diode Lasers and Impact of Hydrogen Peroxide with Controlled Stabilization [O] . Gianluigi Caccianiga, Marco Baldoni, Carlo Angelo Ghisalberti, 2006

机译：高功率光动力疗法（HLLT）功效的体外初步研究：脉冲二极管激光器和超脉冲二极管激光器之间的比较以及过氧化氢的受控稳定作用
7. Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling [O] . Federico Alimenti, Guendalina Simoncini, Gianluca Brozzetti, 2020

机译：基于P-I-N二极管的毫米波雪崩噪声源130 nm SiGe BICMOS技术：设备表征和CAD建模

A 12-Channel Parallel 40Gb/s 0.35#956;m SiGe BiCMOS Laser Diode Driver

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