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Anti-Stokes Photoluminescence from n-type Free-Standing GaN Based on Competing Two-Photon Absorption and Phonon-Assisted Absorption

机译:基于竞争双光子吸收和声子辅助吸收的N型独立GaN的抗Strokes光致发光

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摘要

Mechanisms for anti-Stokes photoluminescence observed at room temperature from n-type free-standing GaN have been attributed by us to the competition between two-photon absorption and phonon-assisted absorption.
机译:从N型独立GaN的室温下观察到的抗Stotokes光致发光的机制已经归因于我们对双光子吸收和声子辅助吸收的竞争。

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