EPITAXIAL GROWTH OF NON-POLAR A-PLANE ZNO ON R-PLANE SAPPHIRE SUBSTRATES BY MOCVD AND RF-SPUTTERING

摘要

Epitaxial growth of non-polar (1120) ZnO thin films (a-plane ZnO) on (1102) sapphire (r-plane sapphire) were successfully implemented through metal organic chemical vapor deposition (MOCVD) and radio-frequency sputtering, respectively. For ZnO film deposited by sputtering, the growth temperature and the flow ratios of argon to oxygen were shown to significantly influence the crystalline quality and surface morphology of ZnO films. Rat surface ZnO epitaxial film can be grown by MOCVD. The epitaxial relationship between ZnO and sapphire substrate is