Properties of Organic-Inorganic Hybrid Thin Film Transistorswith ZnO Active Layer on PES Substrates

摘要

The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/A1 on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 -140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 10~(17) and 37.7 m, respectively. The field effect mobility () and threshold voltage (V_(TH)) of the prepared OITFT were about 0.01 cm~2/V and 12 V, respectively. The I_(on/off)switching ratio was about 10~4.