Point Defects Creation by Swift Heavy IonIrradiation Induced Low Energy Electrons inYBa2Cu3O7-ythrough Dissociative Recombination

摘要

Our in-situ temperature dependent resistance studies in a set of YBa_2Cu~3O_7-y(YBCO)thin films irradiated with 200 MeV Ag ions at 79 K show that in addition to amorphized latenttracks, a large concentration of point defects are created by the secondary electrons emittedradially from the ion path. Detailed calculation of the energetics indicates that in the YBCOmatrix, these secondary electrons cannot create defect by direct elastic knock-on process. Wepropose an inelastic interaction of the secondary electrons with the YBCO matrix, which resultsinto defect creation by a process similar to dissociative recombination. Our study shows thataccumulation of point defects during irradiation is accompanied by self-organization of pointdefect into clustering and phase segregation.