Characterization of A1GaN/GaN HeterostructureField Effect Transistors (HFETs) with VariableThickness Channel and Substrate Type

摘要

In this study, AIGaN/GaN-based heterostructure field effect transistor (HFET) was simulated by using ISE TCAD software. The effects of varying thickness, substrate type and doping channel levels were investigated. The device output characteristics of drain current and voltage with various gate biases were presented. A maximum drain current and extrinsic transconductance were achieved with AIGaN HFET grown on AIN/SiC substrate. The device performance can be improved by optimizing the substrate type and heavily doped channel layer which will reduce the contact resistance and enhance the transconductance. All results are comparable with the experimental results obtained by other researchers.