The Effect of Annealing Process on theColloidal Golds and Gallium ArsenideNanowires

摘要

Nanowires as a one dimensional building block have generated a lot of interests due to their unique physical properties and potential to revolutionize broad areas of nanotechnology. For successful applications, precise knowledge about the effect of the various growth parameters is essential. In this study, we report the effects of annealing process on colloidal gold and GaAs nanowires using metal-organic chemical vapor deposition. AFM observation showed that the annealing process of colloidal gold, the substrate surface was attacked with a pit left behind where Au and Ga dissolved to form eutectic alloy. The morphological studies using FE-SEM of the as-annealed GaAs nanowire showed the direction of the GaAs nanowire to be 35° inclined from the <100> surface but grown almost perpendicular to the substrate when the annealing process was omitted from the MOCVD growth process flow. TEM studies showed that the GaAs nanowires grown on <100> orientation substrate without annealing process have less crystal lattice defects compared to the one grown with annealing process.