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Effective Solution to Reticle Haze Formation at 193nm Lithography

机译:193nm光刻在193nm光刻形成的有效解决方案

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Various studies have been published on the formation and prevention of reticle haze; however, yield loss due to reticle haze is still an issue for most of the IC makers. For a mass production IC manufacturing fab, an easy and practical solution is needed to prevent haze generation. In this study, we focus on the solution, which can be easily implemented inside production fab and does not require a total implementation of specific type of gas or equipment. A reticle carrier with purging function combining with the use of a purge station for purging and storage is used. After implementing this solution in a 12" DRAM fabrication facility, the number of wafers printed without haze development on reticles protected by this solution can be up to 150,000 wafers, and this is great achievement in help ramping up the production and also maintain high yield. This solution has been proven to be effective in reducing the generation of haze.
机译:已经发表了各种研究,对掩盖雾度的形成和预防;然而,由于大多数IC制造商而导致的屈服损失仍然是一个问题。对于大规模生产IC制造工厂,需要一种简单实用的解决方案来防止雾度生成。在这项研究中,我们专注于解决方案,该解决方案可以很容易地在生产工厂内部实施,并且不需要总体执行特定类型的气体或设备。使用具有吹扫功能的掩模版载体与使用吹扫站进行吹扫和储存。在12“DRAM制造设施中实施该解决方案之后,通过该解决方案保护的掩模掩模的晶圆片的晶片数量可达150,000个晶片,这是帮助升高生产并保持高产的巨大成就。已证明该解决方案有效地减少了阴霾的产生。

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