Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Based on Wigner Function Model

摘要

We have developed a new self-consistent and three-dimensional quantum simulator for Si-nanowire transistors based on the Wigner function model, coupled with Schrodinger-Poisson algorithm. To achieve a sufficient accuracy for calculating subthreshold current, we introduced a third-order differencing scheme for discretizing the diffusion term in the Wigner transport equation. Then, by comparing with semiclassical Boltzmann and non-equilibrim Green's function approaches, the validity of the present simulator is discussed.