Semiclassical Monte Carlo with quantum-confinement enhanced scattering - Quantum correction and application to short-channel device performance vs. mobility for biaxial-tensile-strained silicon nMOSFETs

摘要

A model of valley-dependent quantum-confinement-enhanced scattering has been added to existing quantum corrections in our full band Monte Carlo simulator, Monte Carlo of the University of Texas (MCUT) [1]. The simulator was then calibrated to fit mobility curves, both strained and unstrained, by adjusting surface roughness parameters. By comparing mobility and device simulation results, we find significant deviations in short channel strained Si nMOSFET performance - some potentially beneficial - from expectations based on mobility and thermal velocity alone.