Band Calculation for the Hexagonal and FCC Chalcogenide Ge{sub}2Sb{sub}2Te{sub}5

摘要

The paper addresses the calculation of the band structure for different phases of the chalcogenide Ge{sub}2Sb{sub}2Te{sub}5 compound, which is raising considerable interest in view of the applications to the nonvolatile-memory technology. The band structure is necessary for determining the charge- and heat-transport properties of the material. The band diagram of the face-centered cubic phase, which is the most important one for the operation of phase-change memories, is shown for the first time.