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Preparation Of TNAs/NiO P-N Heterojunction And Their Applications In UV Photosensor

机译:TNAS / NIO P-N异质结的制备及其在UV光电传感器中的应用

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A nanocomposite consisted of n-type titanium dioxide (TiO_2) nanorod arrays (TNAs) and p-type nickel oxide (NiO) were deposited using a novel facile low-temperature aqueous chemical route (ACR) in a Schott bottle with cap clamps and sol-gel spin coating method, respectively on a transparent conductive oxide (TCO) glass substrate for the application of ultraviolet (UV) photosensor. The p-n heterojunction photosensor exhibited an increase in photocurrent under UV light (365 nm, 750 μW/cm~2) at applied reverse bias. The measured UV response also revealed an increase in photocurrent, and dark current with increasing applied reverse bias on the p-n heterojunction. In this study, the fabricated TNAs/NiO composite nanostructures showed potential applications for photosensor based on the steady photocurrent results obtained under UV irradiation
机译:使用具有盖帽夹具和溶胶的Schott瓶中的新型轻度低温含水化学途径(ACR)沉积由N型二氧化钛(TiO_2)纳米棒(TNA)和P型镍氧化物(NIO)组成的纳米复合材料。 - 分别在透明导电氧化物(TCO)玻璃基板上的旋转涂层方法,用于施加紫外线(UV)光电传感器。 P-N异质光电子传感器在施加的反向偏压下表现出UV光(365nm,750μW/ cm〜2)下的光电流增加。测量的UV响应还揭示了光电流的增加,并且随着P-N异质结上的施加反向偏压而增加的暗电流。在该研究中,制造的TNAs / NiO复合纳米结构显示了基于UV照射下获得的稳定光电流结果的光电传感器的潜在应用

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